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Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs- and InP-based quantum wires and dots
Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs- and InP-based quantum wires and dots
Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs- and InP-based quantum wires and dots
Hasegawa, H. (author) / Sato, T. (author) / Okada, H. (author) / Jinushi, K.-I. (author) / Kasai, S. (author) / Satoh, Y. (author)
APPLIED SURFACE SCIENCE ; 123/124 ; 335-338
1998-01-01
4 pages
Article (Journal)
English
DDC:
621.35
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Gate control characteristics in GaAs nanometer-scale Schottky wrap gate structures
| British Library Online Contents | 2002