Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Metalorganic molecular beam epitaxy/etching of III-V semiconductors
Metalorganic molecular beam epitaxy/etching of III-V semiconductors
Metalorganic molecular beam epitaxy/etching of III-V semiconductors
Gonda, S. (Autor:in) / Asahi, H. (Autor:in) / Yamamoto, K. (Autor:in) / Hidaka, K. (Autor:in) / Sato, J. (Autor:in) / Tashima, T. (Autor:in) / Asami, K. (Autor:in)
APPLIED SURFACE SCIENCE ; 130-132 ; 377-381
01.01.1998
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Process Simulation for the MOMBE (Metalorganic Molecular Beam Epitaxy) Growth
British Library Conference Proceedings | 1993
|Mechanisms and applications of selective area growth by metalorganic molecular beam epitaxy (CBE)
British Library Online Contents | 1997
|British Library Online Contents | 1995
|British Library Online Contents | 2005
|Photocatalytic surface reactions in metalorganic vapor-phase epitaxy
British Library Online Contents | 1994
|