Process Simulation for the MOMBE (Metalorganic Molecular Beam Epitaxy) Growth: Fid-Bau Portal

2nd International conference on computer applications to materials and molecular science and engineering, Computer aided innovation of new materials ; 1992 ; Yokohama; Japan

Erschienen in:

Computer aided innovation of new materials ; 1633-1636

COMPUTER AIDED INNOVATION OF NEW MATERIALS

Erscheinungsdatum:

01.01.1993

Format / Umfang:

4 pages

Anmerkungen:

In 2 pts. Also known as CAMSE 92

ISBN:

044489778X

Medientyp:

Aufsatz (Konferenz)

Format:

Sprache:

Englisch

Schlagwörter:

computer applications , materials science , computer aided innovation , new materials , CAMSE , materials engineering , molecular science

Gonda, S. / Asahi, H. / Yamamoto, K. et al. | British Library Online Contents | 1998

Mechanisms and applications of selective area growth by metalorganic molecular beam epitaxy (CBE)

Heinecke, H. / Wachter, M. | British Library Online Contents | 1997

Growth and characterization of MOMBE grown HfO2

Moon, T. H. / Ham, M. H. / Kim, M. S. et al. | British Library Online Contents | 2005

GaAs growth by photon-assisted metalorganic molecular beam epitaxy using ethyl derivatives of gallium and arsenic

Maury, F. / Bouabid, K. / Fazouan, N. et al. | British Library Online Contents | 1995

GaAs growth selectivity using a GaN mask by MOMBE

Yoshida, S. / Sasaki, M. | British Library Online Contents | 1998

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