Surface passivation and morphology of GaAs(100) treated in HCl-isopropanol solution

Alperovich, V. L. / Tereshchenko, O. E. / Rudaya, N. S. et al. | British Library Online Contents | 2004

Composition, morphology and surface recombination rate of HClisopropanol treated and vacuum annealed InAs(111)A surfaces

Kesler, V. G. / Seleznev, V. A. / Kovchavtsev, A. P. et al. | British Library Online Contents | 2010

Deep levels reduction in (NH4)2S treated and annealed GaAs epilayer on Si substrate

Saravanan, S. / Soga, T. / Jimbo, T. et al. | British Library Online Contents | 2001

Scanning tunneling microscopy study of GaAs(1 0 0) surface prepared by HCl-isopropanol treatment

Laukkanen, P. / Kuzmin, M. / Perala, R. E. et al. | British Library Online Contents | 2003

New reconstruction-stoichiometry correlation for GaAs(001) surface treated by atomic hydrogen

Toropetsky, K. V. / Tereshchenko, O. E. / Petukhov, D. A. et al. | British Library Online Contents | 2008