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Near-thermal equilibrium growth of SiC by physical vapor transport
Near-thermal equilibrium growth of SiC by physical vapor transport
Near-thermal equilibrium growth of SiC by physical vapor transport
Schulze, N. (Autor:in) / Barrett, D.L. (Autor:in) / Pensl, G. (Autor:in) / Rohmfeld, S. (Autor:in) / Hundhausen, M. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 44 - 47
01.01.1999
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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