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Near-thermal equilibrium growth of SiC by physical vapor transport
Near-thermal equilibrium growth of SiC by physical vapor transport
Near-thermal equilibrium growth of SiC by physical vapor transport
Schulze, N. (author) / Barrett, D.L. (author) / Pensl, G. (author) / Rohmfeld, S. (author) / Hundhausen, M. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 44 - 47
1999-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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