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Kinetics and morphological stability in sublimation growth of 6H and 4H SiC epitaxial layers
Kinetics and morphological stability in sublimation growth of 6H and 4H SiC epitaxial layers
Kinetics and morphological stability in sublimation growth of 6H and 4H SiC epitaxial layers
Syvajarvi, M. (Autor:in) / Yakimova, R. (Autor:in) / Kakanakova-Georgieva, A. (Autor:in) / MacMillan, M.F. (Autor:in) / Janzen, E. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 161 - 164
01.01.1999
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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