Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes
Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes
Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes
Danielsson, E. (Autor:in) / Zetterling, C.-M. (Autor:in) / Ostling, M. (Autor:in) / Breitholtz, B. (Autor:in) / Linthicum, K. (Autor:in) / Thomson, D.B. (Autor:in) / Nam, O.-H. (Autor:in) / Davis, R.F. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 320 - 324
01.01.1999
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2003
|Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
British Library Online Contents | 2004
|Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs
British Library Online Contents | 2014
|British Library Online Contents | 2019
|Characterization of Ohmic contacts on GaN/AlGaN heterostructures
British Library Online Contents | 2006
|