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Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
Lebedev, A. A. (Autor:in) / Strel chuk, A. M. (Autor:in) / Kuznetsov, A. N. (Autor:in) / Savkina, N. S. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 597-600
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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|SiC Heteropolytype Structures Grown by Sublimation Epitaxy
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|Properties of AlN Layers Grown by Sublimation Epitaxy
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|6H-3C SiC structures grown by sublimation epitaxy
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