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Influence of silicon ion implantation and post-implantation annealing on the oxidation behaviour of TiAl under thermal cycle conditions
Influence of silicon ion implantation and post-implantation annealing on the oxidation behaviour of TiAl under thermal cycle conditions
Influence of silicon ion implantation and post-implantation annealing on the oxidation behaviour of TiAl under thermal cycle conditions
Taniguchi, S. (Autor:in) / Kuwayama, T. (Autor:in) / Zhu, Y.-C. (Autor:in) / Matsumoto, Y. (Autor:in) / Shibata, T. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- A ; 277 ; 229 - 236
01.01.2000
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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