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Influence of silicon ion implantation and post-implantation annealing on the oxidation behaviour of TiAl under thermal cycle conditions
Influence of silicon ion implantation and post-implantation annealing on the oxidation behaviour of TiAl under thermal cycle conditions
Influence of silicon ion implantation and post-implantation annealing on the oxidation behaviour of TiAl under thermal cycle conditions
Taniguchi, S. (author) / Kuwayama, T. (author) / Zhu, Y.-C. (author) / Matsumoto, Y. (author) / Shibata, T. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- A ; 277 ; 229 - 236
2000-01-01
8 pages
Article (Journal)
English
DDC:
620.11
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