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Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO"2
Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO"2
Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO"2
Bonafos, C. (Autor:in) / Garrido, B. (Autor:in) / Lopez, M. (Autor:in) / Perez-Rodriguez, A. (Autor:in) / Morante, J.R. (Autor:in) / Kihn, Y. (Autor:in) / Ben Assayag, G. (Autor:in) / Claverie, A. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 69-70 ; 380 - 385
01.01.2000
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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