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Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO"2
Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO"2
Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO"2
Bonafos, C. (author) / Garrido, B. (author) / Lopez, M. (author) / Perez-Rodriguez, A. (author) / Morante, J.R. (author) / Kihn, Y. (author) / Ben Assayag, G. (author) / Claverie, A. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 69-70 ; 380 - 385
2000-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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