Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Ab Initio Study of Intrinsic Point Defects and Dopant-Defect Complexes in SiC: Application to Boron Diffusion
Ab Initio Study of Intrinsic Point Defects and Dopant-Defect Complexes in SiC: Application to Boron Diffusion
Ab Initio Study of Intrinsic Point Defects and Dopant-Defect Complexes in SiC: Application to Boron Diffusion
Bockstedte, M. (Autor:in) / Pankratov, O. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 949-952
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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