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Ab Initio Study of Intrinsic Point Defects and Dopant-Defect Complexes in SiC: Application to Boron Diffusion
Ab Initio Study of Intrinsic Point Defects and Dopant-Defect Complexes in SiC: Application to Boron Diffusion
Ab Initio Study of Intrinsic Point Defects and Dopant-Defect Complexes in SiC: Application to Boron Diffusion
Bockstedte, M. (author) / Pankratov, O. (author)
MATERIALS SCIENCE FORUM ; 338/342 ; 949-952
2000-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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