Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes
Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes
Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes
Wahab, Q. (Autor:in) / Ellison, A. (Autor:in) / Hallin, C. (Autor:in) / Henry, A. (Autor:in) / Di Persio, J. (Autor:in) / Martinez, R. (Autor:in) / Janzen, E. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 1175-1178
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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