Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure Growth
Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure Growth
Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure Growth
Starke, U. (Autor:in) / Bernhardt, J. (Autor:in) / Schardt, J. (Autor:in) / Seubert, A. (Autor:in) / Heinz, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 341-344
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Polytype Stability of 4H-SiC Seed Crystal on Solution Growth
British Library Online Contents | 2011
|Are polytype transitions possible during boron diffusion?
British Library Online Contents | 1995
|Influence of the Growth Direction and Polytype on the Stacking Fault Generation in -SiC
British Library Online Contents | 1998
|Stacking faults at the boundary between 15R- and 4H-polytype in SiC
British Library Online Contents | 2012
|Polytype AG verkauft Mehrheiten von Polytype Italia S.p.A
British Library Online Contents | 1998