Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n<=4) substrates
Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n<=4) substrates
Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n<=4) substrates
Feng, J. M. (Autor:in) / Asai, K. (Autor:in) / Narukawa, Y. (Autor:in) / Kawakami, Y. (Autor:in) / Fujita, S. (Autor:in) / Ohachi, T. (Autor:in)
APPLIED SURFACE SCIENCE ; 159-160 ; 532-539
01.01.2000
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Annealing effect in InAs/GaAs multiple quantum wells grown on variously oriented substrates
British Library Online Contents | 1993
|Carrier-Carrier Interaction and Fast Intersubband Scattering in Wide GaAs Quantum Wells
British Library Online Contents | 1999
|Electric field dependence of intersubband transitions in GaAs/AlGaAs single quantum wells
British Library Online Contents | 1997
|Intersubband transitions in InAs/AlSb quantum wells
British Library Online Contents | 1993
|The investigation of growth characteristics of single quantum wells grown on (311) GaAs substrates
British Library Online Contents | 1994
|