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    Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n<=4) substrates

    New search for: Feng, J. M.
    New search for: Asai, K.
    New search for: Narukawa, Y.
    New search for: Kawakami, Y.
    New search for: Fujita, S.
    New search for: Ohachi, T.

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    Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n<=4) substrates

    New search for: Feng, J. M.
    New search for: Asai, K.
    New search for: Narukawa, Y.
    New search for: Kawakami, Y.
    New search for: Fujita, S.
    New search for: Ohachi, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n<=4) substrates

    New search for: Feng, J. M.
    New search for: Asai, K.
    New search for: Narukawa, Y.
    New search for: Kawakami, Y.
    New search for: Fujita, S.
    New search for: Ohachi, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n<=4) substrates

    Contributors:

    Feng, J. M. (author) / Asai, K. (author) / Narukawa, Y. (author) / Kawakami, Y. (author) / Fujita, S. (author) / Ohachi, T. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 159-160 ; 532-539

    Publication date:

    2000-01-01

    Size:

    8 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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