Characterization of lattice-matched and strained GaInAs/AlInAs HEMT structures by photoluminescence spectroscopy

Tabata, A. / Benyattou, T. / Guillot, G. et al. | British Library Online Contents | 1993

Phosphorous passivation of In0.53Ga0.47As using MOVPE and characterization of Au-Ga2O3(Gd2O3)-In0.53Ga0.47As MIS capacitor

Pal, S. / Shivaprasad, S. M. / Aparna, Y. et al. | British Library Online Contents | 2005

Intense photoluminescence observed in modulation doped Si/SiGe quantum well structures

Ni, W.-X. / Buyanova, I. A. / Henry, A. et al. | British Library Online Contents | 1996

Photoluminescence of piezoelectric strained InGaAs-GaAs multi-quantum well p-i-n structures

David, J. P. R. / Sale, T. E. / Pabla, A. S. et al. | British Library Online Contents | 1995

Photoluminescence study and parameter evaluation in InAs quantum dot-in-a-well structures

Torchynska, T. V. / Hernandez, A. V. / Polupan, G. et al. | British Library Online Contents | 2011