Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Influence of reactive ion etching damage on the Schottky barrier height of Ti/p-Si interface
Influence of reactive ion etching damage on the Schottky barrier height of Ti/p-Si interface
Influence of reactive ion etching damage on the Schottky barrier height of Ti/p-Si interface
Fujimura, N. (Autor:in) / Yamaguchi, T. (Autor:in) / Kato, H. (Autor:in) / Ito, T. (Autor:in)
APPLIED SURFACE SCIENCE ; 159-160 ; 186-190
01.01.2000
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Schottky barrier height at the Au/porous silicon interface
| British Library Online Contents | 1998
Modification of Al/Si interface and Schottky barrier height with chemical treatment
| British Library Online Contents | 2002
Temperature-dependent barrier height in CdSe Schottky diode
| British Library Online Contents | 2010
Direct variation of metai-GaAs schottKy barrier height by the influence of interface S, Se, and Te
| Springer Verlag | 1990
Phase transition related barrier height in Ga-Si Schottky diode
| British Library Online Contents | 1997