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Influence of reactive ion etching damage on the Schottky barrier height of Ti/p-Si interface
Influence of reactive ion etching damage on the Schottky barrier height of Ti/p-Si interface
Influence of reactive ion etching damage on the Schottky barrier height of Ti/p-Si interface
Fujimura, N. (author) / Yamaguchi, T. (author) / Kato, H. (author) / Ito, T. (author)
APPLIED SURFACE SCIENCE ; 159-160 ; 186-190
2000-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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