Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
The effect of a thin antimony layer addition on PdZn ohmic contacts for p-type InP
The effect of a thin antimony layer addition on PdZn ohmic contacts for p-type InP
The effect of a thin antimony layer addition on PdZn ohmic contacts for p-type InP
Asamizu, H. (Autor:in) / Yamaguchi, A. (Autor:in) / Iguchi, Y. (Autor:in) / Saitoh, T. (Autor:in) / Koide, Y. (Autor:in) / Murakami, M. (Autor:in)
APPLIED SURFACE SCIENCE ; 159-160 ; 174-178
01.01.2000
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Formation Mechanism of Low Contact Resistance PdZn-based Ohmic Contacts for p-type InP
British Library Online Contents | 2002
|British Library Online Contents | 2006
|Thermostable Ohmic Contacts on p-Type SiC
British Library Online Contents | 1998
|Improved AlNi Ohmic Contacts to p-Type SiC
British Library Online Contents | 2004
|Ohmic contacts to p-type 6H-silicon carbide
British Library Online Contents | 1996
|