A platform for research: civil engineering, architecture and urbanism
The effect of a thin antimony layer addition on PdZn ohmic contacts for p-type InP
The effect of a thin antimony layer addition on PdZn ohmic contacts for p-type InP
The effect of a thin antimony layer addition on PdZn ohmic contacts for p-type InP
Asamizu, H. (author) / Yamaguchi, A. (author) / Iguchi, Y. (author) / Saitoh, T. (author) / Koide, Y. (author) / Murakami, M. (author)
APPLIED SURFACE SCIENCE ; 159-160 ; 174-178
2000-01-01
5 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Formation Mechanism of Low Contact Resistance PdZn-based Ohmic Contacts for p-type InP
British Library Online Contents | 2002
|British Library Online Contents | 2006
|Thermostable Ohmic Contacts on p-Type SiC
British Library Online Contents | 1998
|Improved AlNi Ohmic Contacts to p-Type SiC
British Library Online Contents | 2004
|Ohmic contacts to p-type 6H-silicon carbide
British Library Online Contents | 1996
|