Temperature effect on the reconstruction of Sb/Si(001) interface studied by high resolution core level spectroscopy and RHEED analysis: Fid-Bau Portal

Temperature effect on the reconstruction of Sb/Si(001) interface studied by high resolution core level spectroscopy and RHEED analysis

De Padova, P. / Larciprete, R. / Quaresima, C. / Reginelli, A. / Perfetti, P.

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Temperature effect on the reconstruction of Sb/Si(001) interface studied by high resolution core level spectroscopy and RHEED analysis

De Padova, P. / Larciprete, R. / Quaresima, C. / Reginelli, A. / Perfetti, P.

Temperature effect on the reconstruction of Sb/Si(001) interface studied by high resolution core level spectroscopy and RHEED analysis

De Padova, P. / Larciprete, R. / Quaresima, C. / Reginelli, A. / Perfetti, P.

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Titel:

Temperature effect on the reconstruction of Sb/Si(001) interface studied by high resolution core level spectroscopy and RHEED analysis

Beteiligte:

De Padova, P. (Autor:in) / Larciprete, R. (Autor:in) / Quaresima, C. (Autor:in) / Reginelli, A. (Autor:in) / Perfetti, P. (Autor:in)

Erschienen in:

APPLIED SURFACE SCIENCE ; 166 ; 214-219

Erscheinungsdatum:

01.01.2000

Format / Umfang:

6 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.35

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Sb-terminated Si(110), Si(100) and Si(111) surfaces studied with high resolution core-level spectroscopy

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