Control of Schottky and ohmic interfaces by unpinning Fermi level

Hara, S. / Teraji, T. / Okushi, H. et al. | British Library Online Contents | 1997

Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process

Sato, T. / Kasai, S. / Hasegawa, H. | British Library Online Contents | 2001

Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe

Lin, Y. J. / Zeng, J. J. | British Library Online Contents | 2014

Photoemission study of Mg/PTCDA/Se-GaAs Schottky contacts

Park, S. / Kampen, T. U. / Braun, W. et al. | British Library Online Contents | 2001

Gate control characteristics in GaAs nanometer-scale Schottky wrap gate structures

Yumoto, M. / Kasai, S. / Hasegawa, H. | British Library Online Contents | 2002