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Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process
Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process
Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process
Sato, T. (Autor:in) / Kasai, S. (Autor:in) / Hasegawa, H. (Autor:in)
APPLIED SURFACE SCIENCE ; 175-176 ; 181-186
01.01.2001
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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