Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Steam Annealing Effects on CV Characteristics of MOS Structures on (11&unknown;20) Face of 4H-SiC
Steam Annealing Effects on CV Characteristics of MOS Structures on (11&unknown;20) Face of 4H-SiC
Steam Annealing Effects on CV Characteristics of MOS Structures on (11&unknown;20) Face of 4H-SiC
Yoshikawa, M. (Autor:in) / Ohshima, T. (Autor:in) / Itoh, H. (Autor:in) / Takahashi, K. (Autor:in) / Kitabatake, M. (Autor:in)
MATERIALS SCIENCE FORUM ; 353/356 ; 635-638
01.01.2001
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
| British Library Online Contents | 2000
Axial Compression and Post-Deformation Annealing of [unknown]011[unknown] Aluminum Single Crystal
| British Library Online Contents | 2009
Annealing of Implanted Layers in (1&unknown;100) and (11&unknown;20) Oriented SiC
| British Library Online Contents | 2002
Interface Properties of MOS Structures Formed on 4H-SiC C(000&unknown;1) Face
| British Library Online Contents | 2001
4H-SiC MOSFETs on (03&unknown;38) Face
| British Library Online Contents | 2002