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    Steam Annealing Effects on CV Characteristics of MOS Structures on (11&unknown;20) Face of 4H-SiC

    New search for: Yoshikawa, M.
    New search for: Ohshima, T.
    New search for: Itoh, H.
    New search for: Takahashi, K.
    New search for: Kitabatake, M.

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    Steam Annealing Effects on CV Characteristics of MOS Structures on (11&unknown;20) Face of 4H-SiC

    New search for: Yoshikawa, M.
    New search for: Ohshima, T.
    New search for: Itoh, H.
    New search for: Takahashi, K.
    New search for: Kitabatake, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Steam Annealing Effects on CV Characteristics of MOS Structures on (11&unknown;20) Face of 4H-SiC

    New search for: Yoshikawa, M.
    New search for: Ohshima, T.
    New search for: Itoh, H.
    New search for: Takahashi, K.
    New search for: Kitabatake, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Steam Annealing Effects on CV Characteristics of MOS Structures on (11&unknown;20) Face of 4H-SiC

    Contributors:

    Yoshikawa, M. (author) / Ohshima, T. (author) / Itoh, H. (author) / Takahashi, K. (author) / Kitabatake, M. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 353/356 ; 635-638

    Publication date:

    2001-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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