Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC
Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC
Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC
Scharnholz, S. (Autor:in) / Hellmund, O. (Autor:in) / Stein, J. (Autor:in) / Spangenberg, B. (Autor:in) / Kurz, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 353/356 ; 651-654
01.01.2001
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Correlation between Deposition Rate and Hardness of Remote PECVD Silicon Oxide Films
British Library Online Contents | 1998
|Concrete Structures Utilized in Production of Energy
British Library Conference Proceedings | 1986
|Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process
British Library Online Contents | 2012
|British Library Online Contents | 2006
|