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Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC

Scharnholz, S. / Hellmund, O. / Stein, J. / Spangenberg, B. / Kurz, H.

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Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC

Scharnholz, S. / Hellmund, O. / Stein, J. / Spangenberg, B. / Kurz, H.

Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC

Scharnholz, S. / Hellmund, O. / Stein, J. / Spangenberg, B. / Kurz, H.

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Order at Subito €

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Document information

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Document information

Title:

Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC

Contributors:

Scharnholz, S. (author) / Hellmund, O. (author) / Stein, J. (author) / Spangenberg, B. (author) / Kurz, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 353/356 ; 651-654

Publication date:

2001-01-01

Size:

4 pages

ISSN:

Type of media:

Article (Journal)

Type of material:

Print

Language:

English

Classification:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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