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Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage
Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage
Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage
Banc, C. (Autor:in) / Royet, A. S. (Autor:in) / Ouisse, T. (Autor:in) / Bano, E. (Autor:in) / Noblanc, O. (Autor:in) / Brylinski, C. (Autor:in)
MATERIALS SCIENCE FORUM ; 353/356 ; 703-706
01.01.2001
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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