Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage: Fid-Bau Portal

Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage

Banc, C. / Royet, A. S. / Ouisse, T. / Bano, E. / Noblanc, O. / Brylinski, C.

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Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage

Banc, C. / Royet, A. S. / Ouisse, T. / Bano, E. / Noblanc, O. / Brylinski, C.

Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage

Banc, C. / Royet, A. S. / Ouisse, T. / Bano, E. / Noblanc, O. / Brylinski, C.

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Check availability in my library

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Document information

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Document information

Title:

Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage

Contributors:

Banc, C. (author) / Royet, A. S. (author) / Ouisse, T. (author) / Bano, E. (author) / Noblanc, O. (author) / Brylinski, C. (author)

Published in:

MATERIALS SCIENCE FORUM ; 353/356 ; 703-706

Publication date:

2001-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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