Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport
Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport
Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport
Pozina, G. (Autor:in) / Bergman, J. P. (Autor:in) / Monemar, B. (Autor:in) / Iwaya, M. (Autor:in) / Nitta, S. (Autor:in) / Amano, H. (Autor:in) / Akasaki, I. (Autor:in)
MATERIALS SCIENCE FORUM ; 353/356 ; 791-794
01.01.2001
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD
British Library Online Contents | 2001
|Radiative Recombination in InGaN/GaN Multiple Quantum Wells
British Library Online Contents | 2000
|Optical Properties of InGaN/GaN Multiple Quantum Wells
British Library Online Contents | 1998
|Study of structural defects limiting the luminescence of InGaN single quantum wells
British Library Online Contents | 2001
|Origin of the fluctuations in the luminescence emission in InGaN quantum wells
British Library Online Contents | 2006
|