Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
A tight binding calculation of d-doped quantum wells in Si
A tight binding calculation of d-doped quantum wells in Si
A tight binding calculation of d-doped quantum wells in Si
Gaggero-Sager, L. M. (Autor:in) / Vlaev, S. (Autor:in) / Monsivais, G. (Autor:in)
COMPUTATIONAL MATERIALS SCIENCE ; 20 ; 177-180
01.01.2001
4 pages
Aufsatz (Zeitschrift)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Tight binding studies of exohedral silicon doped C60
British Library Online Contents | 2003
|Tight Binding Calculation of Tilt and Twist Boundaries in Silicon
British Library Conference Proceedings | 1993
|British Library Online Contents | 1995
|Acceptor states in boron doped SiGe quantum wells
British Library Online Contents | 1997
|Acceptor states in boron doped SiGe quantum wells
British Library Online Contents | 1997
|