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The use of hydrogen passivation to fabricate Schottky diodes for DLTS measurements of heavily-doped p+ Si
The use of hydrogen passivation to fabricate Schottky diodes for DLTS measurements of heavily-doped p+ Si
The use of hydrogen passivation to fabricate Schottky diodes for DLTS measurements of heavily-doped p+ Si
Tokuda, Y. (Autor:in) / Namizaki, T. (Autor:in) / Okumura, T. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 167-169
01.01.2001
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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