Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Mid-infrared induced quenching of photoluminescence in Si:Er
Mid-infrared induced quenching of photoluminescence in Si:Er
Mid-infrared induced quenching of photoluminescence in Si:Er
Forcales, M. (Autor:in) / Bradley, I. V. (Autor:in) / Wells, J. P. (Autor:in) / Gregorkiewicz, T. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 81 ; 80 - 82
01.01.2001
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Photoluminescence from Si:Er under front and backside excitation
British Library Online Contents | 2001
|Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes
British Library Online Contents | 2008
|Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures
British Library Online Contents | 1997
|The Physics and Application of Si:Er for Light Emitting Diodes
British Library Online Contents | 1994
|Optical and Electrical Properties of Si:Er Light-Emitting Structures
British Library Online Contents | 1995
|