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Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes
Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes
Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes
Shmagin, V. B. (Autor:in) / Lyutov, A. V. (Autor:in) / Remizov, D. Y. (Autor:in) / Kudryavtsev, K. E. (Autor:in) / Stepikhova, M. V. (Autor:in) / Krasilnik, Z. F. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 146 ; 256-259
01.01.2008
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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