Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fields
Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fields
Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fields
Morel, A. (Autor:in) / Lefebvre, P. (Autor:in) / Taliercio, T. (Autor:in) / Gallart, M. (Autor:in) / Gil, B. (Autor:in) / Mathieu, H. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 221 - 223
01.01.2001
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Microscopic gain theory for group III nitride semiconductor quantum wells
British Library Online Contents | 1997
|British Library Online Contents | 2002
|Luminescence studies on nitride quaternary alloys double quantum wells
British Library Online Contents | 2008
|Intersubband Optical Absorption in Quantum Wells Under Applied Electric and Intense Laser Fields
British Library Online Contents | 2004
|