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Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fields

Morel, A. / Lefebvre, P. / Taliercio, T. / Gallart, M. / Gil, B. / Mathieu, H.

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Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fields

Morel, A. / Lefebvre, P. / Taliercio, T. / Gallart, M. / Gil, B. / Mathieu, H.

Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fields

Morel, A. / Lefebvre, P. / Taliercio, T. / Gallart, M. / Gil, B. / Mathieu, H.

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Check availability in my library

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Document information

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Document information

Title:

Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fields

Contributors:

Morel, A. (author) / Lefebvre, P. (author) / Taliercio, T. (author) / Gallart, M. (author) / Gil, B. (author) / Mathieu, H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 221 - 223

Publication date:

2001-01-01

Size:

3 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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