Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Properties of GaAsN/GaAs quantum wells studied by optical detection of cyclotron resonance
Properties of GaAsN/GaAs quantum wells studied by optical detection of cyclotron resonance
Properties of GaAsN/GaAs quantum wells studied by optical detection of cyclotron resonance
Hai, P. N. (Autor:in) / Chen, W. M. (Autor:in) / Buyanova, I. A. (Autor:in) / Monemar, B. (Autor:in) / Xin, H. P. (Autor:in) / Tu, C. W. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 218 - 220
01.01.2001
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE
British Library Online Contents | 2013
|Excitons localization effects in GaAsN/GaAs epilayers grown by MOCVD
British Library Online Contents | 2002
|MOVPE growth of GaAsN: surface study by AFM and optical properties
British Library Online Contents | 2000
|Optical studies of strained InGaAs/GaAs single quantum wells
British Library Online Contents | 1994
|Optical properties of GaInNAsSb/GaAs/GaAs1-xNx (x10%) saturable absorber quantum wells
British Library Online Contents | 2008
|