Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Processing-induced electron traps in n-type GaN
Processing-induced electron traps in n-type GaN
Processing-induced electron traps in n-type GaN
Auret, F. D. (Autor:in) / Goodman, S. A. (Autor:in) / Myburg, G. (Autor:in) / Mohney, S. E. (Autor:in) / de Lucca, J. M. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 102 - 104
01.01.2001
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Metallisation induced electron traps in epitaxially grown n-type GaN
British Library Online Contents | 2000
|Characterization of Electron Traps in n-InP Induced by Hydrogen Plasma
British Library Online Contents | 1995
|Electron traps created in n-type GaN during 25 keV hydrogen implantation
British Library Online Contents | 2002
|Depth of Electron Traps in N-Alkanes
British Library Online Contents | 2011
|British Library Online Contents | 2000
|