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Synchrotron radiation excited total reflection X-ray fluorescence quantitative analysis of Si wafer by absolute fluorescence intensity calculation
Synchrotron radiation excited total reflection X-ray fluorescence quantitative analysis of Si wafer by absolute fluorescence intensity calculation
Synchrotron radiation excited total reflection X-ray fluorescence quantitative analysis of Si wafer by absolute fluorescence intensity calculation
Shin, N. S. (Autor:in) / Chang, C. H. (Autor:in) / Koo, Y. M. (Autor:in) / Padmore, H. (Autor:in)
MATERIALS LETTERS ; 49 ; 38-42
01.01.2001
5 pages
Aufsatz (Zeitschrift)
Englisch
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