Dependence of the electron affinity of homoepitaxially grown CVD diamond on the amount of surface oxygen

Yokoyama, M. / Ito, T. | British Library Online Contents | 2000

Growth and characterization of P-doped CVD diamond (111) thin films homoepitaxially grown using trimethylphosphine

Wada, H. / Teraji, T. / Ito, T. | British Library Online Contents | 2005

Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films

Takahashi, T. / Ishida, Y. / Tsuchida, H. et al. | British Library Online Contents | 2002

Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC

Okada, T. / Kimoto, T. / Yamai, K. et al. | British Library Online Contents | 2003

Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy

Tomita, T. / Matsuo, S. / Okada, T. et al. | British Library Online Contents | 2006