Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films

Takahashi, T. / Ishida, Y. / Tsuchida, H. et al. | British Library Online Contents | 2002

Photoemission properties and surface structures of homoepitaxially grown CVD diamond(1 0 0) surfaces

Murakami, H. / Yokoyama, M. / Lee, S. M. et al. | British Library Online Contents | 2001

Dependence of the electron affinity of homoepitaxially grown CVD diamond on the amount of surface oxygen

Yokoyama, M. / Ito, T. | British Library Online Contents | 2000

Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC

Okada, T. / Kimoto, T. / Yamai, K. et al. | British Library Online Contents | 2003

Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films

Camarda, M. / Canino, A. / Fiorenza, P. et al. | British Library Online Contents | 2013