Some evidences of ordering in InGaP layers grown by liquid phase epitaxy

Prutskij, T. A. / Diaz-Arencibia, P. / Mintairov, A. et al. | British Library Online Contents | 2003

Polarization anisotropy in the photoluminescence from InGaP layers grown by liquid phase epitaxy

Prutskij, T. / Diaz-Arencibia, P. / Brito-Orta, R. A. et al. | British Library Online Contents | 2004

Investigation of the cationic ordering in InGaP/GaAs epilayers grown by low-pressure, metal organic vapour phase epitaxy

Francesio, L. / Franzosi, P. / Caldironi, M. et al. | British Library Online Contents | 1994

Photoluminescence characterization of GaN thin film grown by atmospheric pressure organometallic vapor phase epitaxy

Liao, S. M. / Wen, J. H. / Chou, W. C. et al. | British Library Online Contents | 1997

Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy

Baldini, M. / Albrecht, M. / Fiedler, A. et al. | British Library Online Contents | 2016