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Photoluminescence characterization of GaN thin film grown by atmospheric pressure organometallic vapor phase epitaxy
Photoluminescence characterization of GaN thin film grown by atmospheric pressure organometallic vapor phase epitaxy
Photoluminescence characterization of GaN thin film grown by atmospheric pressure organometallic vapor phase epitaxy
Liao, S. M. (Autor:in) / Wen, J. H. (Autor:in) / Chou, W. C. (Autor:in) / Lan, S. M. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 48 ; 205-210
01.01.1997
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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