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Annihilation kinetics of defects induced by phosphorus ion implantation in silicon
Annihilation kinetics of defects induced by phosphorus ion implantation in silicon
Annihilation kinetics of defects induced by phosphorus ion implantation in silicon
Hadjersi, T. ( Autor:in )
APPLIED SURFACE SCIENCE ; 185 ; 140-146
01.01.2001
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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