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Study of the defect structure, compositional and electrical properties of Er2O3-doped n-type GaSb:Te crystals grown by the vertical Bridgman technique
Study of the defect structure, compositional and electrical properties of Er2O3-doped n-type GaSb:Te crystals grown by the vertical Bridgman technique
Study of the defect structure, compositional and electrical properties of Er2O3-doped n-type GaSb:Te crystals grown by the vertical Bridgman technique
Plaza, J. L. (Autor:in) / Hidalgo, P. (Autor:in) / Mendez, B. (Autor:in) / Piqueras, J. (Autor:in) / Dieguez, E. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 91-92 ; 529 - 533
01.01.2002
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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