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    Study of the defect structure, compositional and electrical properties of Er2O3-doped n-type GaSb:Te crystals grown by the vertical Bridgman technique

    New search for: Plaza, J. L.
    New search for: Hidalgo, P.
    New search for: Mendez, B.
    New search for: Piqueras, J.
    New search for: Dieguez, E.

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    Study of the defect structure, compositional and electrical properties of Er2O3-doped n-type GaSb:Te crystals grown by the vertical Bridgman technique

    New search for: Plaza, J. L.
    New search for: Hidalgo, P.
    New search for: Mendez, B.
    New search for: Piqueras, J.
    New search for: Dieguez, E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Study of the defect structure, compositional and electrical properties of Er2O3-doped n-type GaSb:Te crystals grown by the vertical Bridgman technique

    New search for: Plaza, J. L.
    New search for: Hidalgo, P.
    New search for: Mendez, B.
    New search for: Piqueras, J.
    New search for: Dieguez, E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Study of the defect structure, compositional and electrical properties of Er2O3-doped n-type GaSb:Te crystals grown by the vertical Bridgman technique

    Contributors:

    Plaza, J. L. (author) / Hidalgo, P. (author) / Mendez, B. (author) / Piqueras, J. (author) / Dieguez, E. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 91-92 ; 529 - 533

    Publication date:

    2002-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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